Datasheet Summary
RFP12P08, RFP12P10
Data Sheet June 1999 File Number
12A, 80V and 100V, 0.300 Ohm, P-Channel Power MOSFETs
The RFP12P08, and RFP12P10 are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17511.
Features
- 12A, 80V and 100V
- rDS(ON) = 0.300Ω
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
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