RT2N63M Description
RT2N63M is a posite transistor with built-in bias resistor ① 2.1 1.25 ⑤ 0.2 0.13 ④ RTr2 0~0.1 R1 ② ③ Unit:mm.
RT2N63M is COMPOUND TRANSISTOR manufactured by Isahaya Electronics Corporation.
| Part Number | Description |
|---|---|
| RT2N62M | COMPOUND TRANSISTOR |
| RT2N65M | COMPOUND TRANSISTOR |
| RT2N03M | COMPOUND TRANSISTOR |
| RT2N04M | COMPOUND TRANSISTOR |
| RT2N05M | Silicon NPN Epitaxial Type Transistor |
RT2N63M is a posite transistor with built-in bias resistor ① 2.1 1.25 ⑤ 0.2 0.13 ④ RTr2 0~0.1 R1 ② ③ Unit:mm.