RT2N65M Datasheet | Isahaya Electronics Corporation

RT2N65M posite Transistor For Muting Application Silicon NPN Epitaxial Type OUTLINE DRAWING DESCRIPTION RT2N65M is a posite transistor with built-in bias resistor ① 2.1 1.25 ⑤ 0.2 0.13 ④ RTr2 0～0.1 R1 ② ③ Unit:mm FEATURE 0.65 2.0 0.65 - Built-in bias resistor ( R1=10 KΩ) - Mini package for easy mounting ② ③ ④ APPLICATION muting circuit、switching circuit 0.9 0.65 ⑤ RTr1 R1 ① TERMINAL CONNECTOR ①：BASE１ ②：EMITTER（MON） ③：BASE２ ④：COLLECTOR２ ⑤：COLLECTOR１ JEITA：－ JEDEC：－ MAXIMUM RATINGS Symbol VCBO VEBO VCEO I （Ta=25℃）（RTr1、RTr2） Parameter Ratings 40 40 20 400 150 ＋150 -55～＋150 Unit V V V m A m W ℃ ℃ ① ② ③ MARKING ⑤ ④ Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Collector current Collector dissipation（Total Ta=25℃） Junction temperature Storage temperature PC Tj Tstg N６５ ２ .. ISAHAYA ELECTRONICS CORPORATION RT2N65M posite Transistor For Muting Application Silicon NPN Epitaxial Type Electrical characteristics（Ta=25℃） Symbol VCBO VEBO VCEO ICBO IEBO ｈＦＥ VCE(sat) R1 f T Ron Parameter Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Input resistance Transition frequency Output On-resistance V Test conditions ＩC=50μA , IE=0m A IE=50μA , C=0m A IC=1m A , RBE=∞ VCB=40V , IE=0m A VEB=40V , IC=0m A VCE=5V , IC=-10m A IC=10m A , IB=0.5m A =10V, I E=-10m A, f=100MHz Limits Min 40 40 20 0.5 0.5 820 10 7 10 35 0.94 13 2500 Typ Max Unit V V V μA μA m V KΩ MHz Ω V I=7V, f=1MHz TYPICAL CHARACTERISTICS...