INC6006AS1
INC6006AS1 is SILICON NPN EPITAXIAL TYPE TRANSISTOR manufactured by Isahaya Electronics Corporation.
DESCRIPTION
INC6006AS1 is a silicon NPN transistor. It is designed with high voltage.
FEATURE
- High voltage VCEO = 160V
- Low voltage VCE(sat) = 0.2V(MAX)
- Small capacitance Cob=1.7p F(TYP)
- plementary ： INA6006AS1
APPLICATION
Hi-Fi Audio, High voltage switching.
MAXIMUM RATING（Ta=25℃）
SYMBOL VCBO VEBO VCEO ICM IC PC Tj Tstg
PARAMETER Collector to Base voltage Emitter to Base voltage Collector to Emitter voltage Peak collector current Collector current Collector dissipation(Ta=25℃) Junction temperature Storage temperature
<SMALL-SIGNAL TRANSISTOR>
FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
OUTLINE DRAWING
UNIT：ｍｍ
0.4 7.5MAX
1.0 1.0
13.0MIN
0.1 0.45 2.5 2.5
①②③
TERMINAL CONNECTOR ①：EMITTER ②：COLLECTOR ③：BASE
JEITA：JEDEC：-
RATING 180 6 160 200 100 600 ＋150
-55～＋150
UNIT
MARKING
Type Name
C06 m A
- - W m A m...
