2SB1197
2SB1197 is PNP Transistor manufactured by JCET.
FEATURES z Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50m A) z IC =-0.8A. z plements the 2SD1781.
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
Unit : mm
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC TJ Tstg
Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value -40 -32 -5 -0.8 200 150
-55-150
Unit V V V A m W
℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO h FE VCE(sat) f...
