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2SB1197 - PNP Transistor

Key Features

  • z Low VCE(sat). VCE(sat).

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Datasheet Details

Part number 2SB1197
Manufacturer JCET
File Size 567.26 KB
Description PNP Transistor
Datasheet download datasheet 2SB1197 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SB1197 TRANSISTOR (PNP) FEATURES z Low VCE(sat).VCE(sat)<-0.5V(IC / IB = -0.5A /-50mA) z IC =-0.8A. z Complements the 2SD1781. SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Unit : mm MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -40 -32 -5 -0.