SeCoS Halbleitertechnologie GmbH 2SB1197
PNP Transistor
| Part No. | 2SB1197 |
|---|---|
| Datasheet | 2SB1197 Download |
| Manufacturer |  SeCoS Halbleitertechnologie GmbH |
| Description | PNP Transistor |
| Buy | Stock & Price |
FEATURES
Low VCE(sat).VCE(sat)≦-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A Complements of the 2SD1781 A L 3 SOT-23 3 Top View C B 1 2 2 CLASSIFICATION OF hFE Product-Rank Range Marking 2SB1197-P 82~180 AHP 2SB1197-Q 120~270 AHQ 2SB1197-R 180~390 AHR F K 1 E D G H J PACKAGE INFORMATION Package SOT-23 MPQ 3K LeaderSize 7’ inch REF. A B C D E F Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.02ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Currrent Total Power Dissipation Junction & Storage Temperature Symbol VCBO VCEO VEBO IC Pc TJ, TSTG Ratings -40 -32 -5 -800 200 +150, -55 ~ +150 Unit V V V mA mW ℃ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdo...