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2SB1197 - PNP Transistor

Key Features

  • Low VCE(sat). VCE(sat)≦-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A Complements of the 2SD1781 A L 3 SOT-23 3 Top View C B 1 2 2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SB1197 Elektronische Bauelemente -0.8 A, -40 V PNP Epitaxial Planar Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES Low VCE(sat).VCE(sat)≦-0.5V(IC / IB = -0.5A /-50mA) IC =-0.8A Complements of the 2SD1781 A L 3 SOT-23 3 Top View C B 1 2 2 CLASSIFICATION OF hFE Product-Rank Range Marking 2SB1197-P 82~180 AHP 2SB1197-Q 120~270 AHQ 2SB1197-R 180~390 AHR F K 1 E D G H J PACKAGE INFORMATION Package SOT-23 MPQ 3K LeaderSize 7’ inch REF. A B C D E F Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.09 0.18 0.45 0.60 0.08 0.177 0.6 REF. 0.89 1.