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2SB1197 - PNP Transistors

Key Features

  • Low VCE(sat). VCE(sat) -0.5V IC / IB= -0.5A / -50mA . IC = -0.8A. PNP silicon transistor +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base Voltage Collector-emitter Voltage Emitter-base Voltage Collector current Collector power dissipation Jumction temperature Storage temperature Symbol VCB.

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SMD Type SMD Type PNP Transistors 2SB1197 (2SB1197K) Transistors Features Low VCE(sat).VCE(sat) -0.5V IC / IB= -0.5A / -50mA . IC = -0.8A. PNP silicon transistor +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 1.Base 2.Emitter 3.collector 0-0.1 +0.10.38 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base Voltage Collector-emitter Voltage Emitter-base Voltage Collector current Collector power dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -40 -32 -5 -0.8 0.