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CJAD2399 - P-Channel MOSFET

Description

DFNWB1x1-3L parts are shipped in tape.

carrier tape is made from a dissipative (carbon filled) polycarbonate resin.

The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent.

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Datasheet preview – CJAD2399

Datasheet Details

Part number CJAD2399
Manufacturer JCET
File Size 2.29 MB
Description P-Channel MOSFET
Datasheet download datasheet CJAD2399 Datasheet
Additional preview pages of the CJAD2399 datasheet.

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Full PDF Text Transcription

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB1x1-3L Plastic-Encapsulate MOSFETS CJAD2399 P-Channel 20-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID -20 V 135mΩ@-4.5V -2A 170mΩ@-2.5V DFNWB1x1-3L 3 D 1. GATE 21 2. SOURCE 3. DRAIN FEATURE z High power and current handing capability APPLICATION z Load Switch for Portable Devices z WM applications MARKING 299 Equivalent Circuit Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipation Thermal Resistance from Junction to Ambient(t ≤5s) Junction Temperature Storage Temperature VDS VGS ID IDM IS PD R θJA TJ Tstg Value -20 ±12 -2 -10 -2.0 0.
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