CJP85N80 Datasheet | JCET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L-C Plastic-Encapsulate MOSFETS CJP85N80 N-Channel Power MOSFET V(BR)DSS 85V RDS(on)MAX   8.5mΩ@10V 80A DESCRIPTION The CJP85N80 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. Good stability and uniformity with high EAS .This device is suitable for use in PWM, load switching and general purpose applications. TO-220-3L-C 1. GATE 2. DRAIN FEATURE - Advanced trench process technology - Special designed for convertors and power controls - High density cell design for ultra low RDS(on) - Fully characterized avalanche voltage and current - Fast switching - Good stability and uniformity with high EAS - Excellent package for good heat dissipation - Special process technology for high ESD capability 3. SOURCE 1 2 3 APPLICATION - Power switching application - Hard switched and high frequency circuits - Uninterruptible power supply MARKING EQUIV ALENT...