CJPF01N65B Datasheet | JCET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF01N65B N-Channel Power MOSFET GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified TO-220F 1. GATE 2. DRAIN 3. SOURCE Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy (note1) Power Dissipation Thermal Resistance from Junction to Ambient Operating and Storage Temperature Range Maximum lead temperure for soldering purposes , 1/8”from case for 5 seconds Symbol VDS VGS ID IDM EAS PD RθJA TJ, TSTG Value 650 ±20 1 4 5 2 62.5 -55 ~+150 Unit V A m J W ℃/W ℃ .cj-elec. A,Oct,2014 Electrical characteristics (Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Off characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA Drain-source diode forward voltage(note2) VSD VGS = 0V, IS =1A Zero gate voltage drain current Gate-body leakage curren...