CJPF03N80 Datasheet | JCET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF03N80 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX 800V 4.2Ω@10V 3A TO-220F GENERAL DESCRIPTION The CJPF03N80 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURE z Excellent package for good heat dissipation z Ultra low gate charge z Low reverse transfer capacitance z Fast switching capability z Avalanche energy specified 1. GATE 2. DRAIN 3. SOURCE APPLICATION z Power switching application MARKING EQUIVALENT CIRCUIT CJPF03N80= Device code Solid dot = Green molding pound device, if none, the normal device XXX=Date Code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy (note1) Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Range Maximum lead temperature for soldering purposes , 1/8”from case for 5 seconds Symbol VDS VGS ID IDM EAS RθJA TJ TSTG Value 800 ±30 3 10 170 62.5 150 -55 ~+150 Unit V A m J ℃/W ℃ .cj-elec. B,May,2016 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 ℃ unless otherwise specified Parameter...