CJPF02N60 Datasheet | JCET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate MOSFETS CJPF02N60 N-Channel Power MOSFET V(BR)DSS 600V RDS(on)MAX   4.4Ω@10V 2A General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition , this advanced MOSFET is designed to withstand high energy in avalanche and mutation modes . The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power suppliers, converters and PWM motor controls , these devices are particularly well suited for bridge circuits where diode speed and mutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. TO-220F   1. GATE 2. DRAIN 3. SOURCE Features z Robust High Voltage Termination z Avalanche Energy Specified z...