CJQ05N10 Datasheet | JCET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ05N10 Dual N-Channel MOSFET V(BR)DSS RDS(on)MAX 100V 140mΩ@10V  5A       DESCRIPTION The CJQ05N10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is suitable for use in a wide variety of applications. SOP8 Features z Lead free product is acquired z Special process technology for high ESD capability z High density cell design for ultra low RDS(on) z Good stability and uniformity with high EAS z Excellent package for good heat dissipation MARKING: APPLICATION z Power switching application z Hard switching and high frequency circuits z Uninterruptible power supply Equivalent Circuit Q05N10= Device code YY=Date Code Solid dot = Pin1 indicator Solid dot = Green molding pound device, if none,the normal device. Maximum ratings (Ta=25℃ unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Continuous...