CJQ08N02K Datasheet | JCET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOP8 Plastic-Encapsulate MOSFETS CJQ08N02K N-Channel Power MOSFET DESCRIPTION The device uses advanced trench technology to provide excellent RDS(ON), SOP8 low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested Features - Advanced high cell density Trench technology - Super Low Gate Charge - Green Device Available - High power and current handing capability - Surface mount package - ESD protested APPLICATIONS D DDD 8 7 65 1 234 S S SG - Uni-directional or Bi-directional load switch - Low voltage application, notebook puter power management MARKING - Other battery powered circuits where high-side switching Q08N02K =Device code Solid dot=Pin1 indicator Solid dot = Green molding pound device, if none, the normal device YY=Date Code MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter...