JCET RB551V-40
Schottky barrier Diode
FEATURES
z Small Surface Mounting Type z Low VF z High ReliabilityAPPLICATIONS
z High-Frequency Rectification Switching Regulators MARKING: D4 The marking bar indicates the cathode Solid dot = Green molding compound device,if none, the normal device.MAXIMUM RATINGS
(Ta =25℃ unless otherwise noted ) Symbol Parameter VRM Non-Repetitive Peak Reverse Voltage IO Continuous Forward Current IFSM Non-repetitive Forward Peak Surge Current @t=8.3ms PD Power Dissipation RθJA Thermal Resistance From Junction To Ambient Tj Junction Temperature Tstg Storage Temperature Value 40 500 2 200 500 125 -55~+150 Unit V mA A mW ℃/W ℃ ℃ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Reverse voltage Reverse current Forward voltage =V(BR) IR 0.1mA =IR VR 40V =VF IF 500mA Min Typ Max 40 0.1 0.47 Unit V mA V 1 F,Mar,2015 CAPACITANCE BETWEEN TERMINALS C (pF) T POWER DISSIPATION P (mW) D Typical Characteristics Forward Characteristics 500 100 FORWARD CURRENT I (mA)...