JCET RB715W
Schottky barrier Diode
FEATURES
: Extra Small Power Mold Type Low VF High Reliability MARKING: 3D SOT-523 1 3 2 Solid dot = Green molding compound device,if none, the normal device.MAXIMUM RATINGS
@Ta=25 ℃ Parameter Peak reverse voltage DC reverse voltage 1RQ UHSHWLWLYH Peak )orward 6urge &urrent#W PV Average forward current Power dissipation Thermal Resistance from Junction to Ambient Junction temperature Storage temperature Symbol VRM VR IFSM IO PD RθJA Tj Tstg Limit 40 40 200 30 150 667 125 -55~+150 Unit V V mA mA mW ℃/W ℃ ℃ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Reverse voltage leakage current Symbol IR Test conditions VR=10V Min Typ Forward voltage Capacitance between terminals VF IF=1mA CT VR=1V, f=1MHz 2.0 Max 1 0.37 Unit μA V pF 1 D,Oct,2015 FORWARD CURRENT I (mA) F Ta=100℃ Ta=25℃ REVERSE CURRENT I (nA) R Typical Characteristics Forward Characteristics 100 10 1 0.1 0.01 0.0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE V (V) F 1.0 1000 100 10 1 0 Reverse Characteristics Ta=100℃ Ta...