RB715W Datasheet PDF

FEATURES

: Power dissipation PD: 200 mW (Tamb=25℃) Collector current IF: 30 mA Collector-base voltage VR: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ CIRCUIT: SOT-523 1 3 2 MARKING: 3D

ELECTRICAL CHARACTERISTICS

(Tamb=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Symbol V(BR) IR VF CD Test conditions IR= 100µA VR=10V IF=1mA VR=1V, f=1MHz MIN MAX UNIT 40 V 1 µA 0.37 V 2 pF