RB717F Datasheet PDF

FEATURES

: Power dissipation PD: 200 mW (Tamb=25℃) Collector current IF: 30 mA Collector-base voltage VR: 40 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ CIRCUIT: 1. 30¡ À0. 03 SOT-323 1. 25¡ À0. 05 2. 30¡ À0. 05 Unit: mm 0. 30 2. 00¡ À0. 05 1 3 2 MARKING: 3E

ELECTRICAL CHARACTERISTICS

(Tamb=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol V(BR) IR Test conditions IR= 100µA VR=10V MIN MAX 40 1 Forward voltage VF IF=1mA 0.37 Diode capacitance CD VR=1V, f=1MHz 5 UNIT V µA V pF