JCET RB717F
Schottky barrier Diode
| Part No. | RB717F |
|---|---|
| Datasheet | RB717F Download |
| Manufacturer |  JCET |
| Description | Schottky barrier Diode |
| Buy | Stock & Price |
FEATURES
: Low VF, Low VR High reliability MARKING: 3E● SOT-323 1 3 2 Solid dot = Green molding compound device,if none, the normal device.MAXIMUM RATINGS
@Ta=25 ℃ Parameter Peak reverse voltage DC reverse voltage Non-repetitive Peak Forward Surge Current@t=8.3ms Average forward current Power dissipation Thermal Resistance Junction to Ambient Junction temperature Storage temperature Symbol VRM VR IFSM IO PD RθJA Tj Tstg Limit 40 40 200 30 200 500 125 -55~+150 Unit V V mA mA mW ℃/W ℃ ℃ ELECTRICAL CHA RACTERISTICS (Ta= 25℃ unless otherwise specified) Parameter Reverse voltage leakage current Symbol IR Test conditions VR=10V Min Typ Forward voltage Capacitance between terminals VF IF=1mA CT VR=1V, f=1MHz 2.0 Max 1 0.37 Unit μA V pF 1 D,Oct,2015 Typical Characteristics FORWARD CURRENT I (mA) F Forward Characteristics 100 Reverse Characteristics 10000 1000 T =100 ℃ a REVERSE CURRENT I (nA) R ℃ =25℃ =100 T a T a 10 100 T =25 ℃ a 10 1 0 200 400 600 800 1000 FORWARD VOLTAGE V (mV) F Capacitanc...
