LGE RB717F
Schottky Barrier Diode
| Part No. | RB717F |
|---|---|
| Datasheet | RB717F Download |
| Manufacturer |  LGE |
| Description | Schottky Barrier Diode |
| Buy | Stock & Price |
FEATURES
High reliability type. Low VF. High reliability.APPLICATIONS
Low current rectification. Ordering Information Type No. RB717F Marking 3E Dimensions in inches and (millimeters) Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Characteristic Symbol Limits Unit Repetitive peak reverse Voltage VRM 40 V DC Reverse Voltage VR 40 V Average rectified forward current IO 30 mA Forward current surge peak(60Hz.1cyc) IFSM 200 mA Power Dissipation Operating Junction Temperature Range Pd 200 Tj 125 mW ℃ Storage Temperature Range TSTG -45 to +125 ℃ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Characteristic Symbol Min TYP MAX UNIT Test Condition Forward Voltage Reverse Leakage Current Diode Capacitance VF IR CD - 0.37 V IF=1.0mA - 1.0 μA VR=10V - 2.0 pF VR=1.0V,f=1MHz mail:lge@luguang.cn MMBD717 Schottky Barrier Diode TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified mail:lge@luguang.cn