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1. 01 REF
RB715F SCHOTTKY BARRIER DIODE
FEATURES:
Power dissipation PD: 200 mW (Tamb=25℃)
Collector current IF: 30 mA
Collector-base voltage VR: 40 V
Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
CIRCUIT:
1. 30¡ À0. 03
SOT-323
1. 25¡ À0. 05 2. 30¡ À0. 05
Unit: mm
0. 30 2. 00¡ À0. 05
1 3
2
MARKING: 3D
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Reverse breakdown voltage Reverse voltage leakage current
Symbol V(BR) IR
Test conditions
IR= 100µA
VR=10V
MIN MAX 40
1
Forward voltage
VF IF=1mA
0.
RB715F Datasheet