LGE RB715F
Schottky Barrier Diodes
FEATURES
Extra small power mold type. Low VF. High reliability.APPLICATIONS
General purpose application. Ordering Information Type No. RB715F Marking 3D Dimensions in inches and (millimeters) Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter Symbol Limits Unit Peak reverse voltage Diode reverse voltage VRM 40 VR 40 V V Average forward current IF 30 mA Forward Surge Current t=1μS IFS 200 mA Power Dissipation Junction temperature Pd 150 Tj 125 mW ℃ Storage temperature range Tstg -40-+125 ℃ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Symbol V(BR)R IR VF Test conditions IR= 100μA VR=10V IF=1mA MIN MAX UNIT 40 V 1 μA 370 mV Diode capacitance CD VR=1V f=1MHz 2.0 pF mail:lge@luguang.cn RB715F Schottky Barrier Diodes TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified mail:lge@luguang.cn