ROHM Semiconductor RB715F
Schottky barrier diode
Schottky Barrier Diode RB715F Datasheet lApplication Low current rectification lFeatures 1) Small mold type. (UMD3) 2) Low VF 3) High reliability. lConstruction Silicon epitaxial planar lDimensions (Unit : mm) 2.0±0.2 0.3±0.1 各Eaリchーleドadとhaもs same dimension 同寸法 (3) 0.15±0.05 lLand size figure (Unit : mm) 1.3 0.65 1.25±0.1 2.1±0.1 0.1Min 0.9MIN. 1.6 (2) (0.65) (0.65) 1.3±0.1 (1) ROHM : UMD3 JEDEC :SOT-323 JEITA : SC-70 dot (year week factory) 0~0.1 0.7±0.1 0.9±0.1 lTaping specifications (Unit : mm) 4.0±0.1 2.0±0.05 φf11..5555±00..0055 UMD3 0.8MIN. lStructure cathode anode anode 0.3±0.1 1.75±0.1 8.0±0.2 3.5±0.05 2.4±0.1 2.4±0.1 5.5±0.2 0~0.1 2.25±0.1 0 4.0±0.1 fφ00.5.5±0.00.055 1.25±0.1 lAbsolute maximum ratings (Ta= 25°C) Parameter Symbol Limits Reverse voltage (repetitive peak) Reverse voltage (DC) VRM VR 40 40 Average rectified forward current Io 30 Forward current surge p