JCET RB715F
Schottky barrier Diode
FEATURES
: Extra small power mold type Low VF High reliability MARKING: 3D SOT-323 1 3 2 Solid dot = Green molding compound device,if none, the normal device.MAXIMUM RATINGS
@Ta=25 ℃ Parameter Symbol Peak reverse voltage VRM DC reverse voltage &1uRrQr eUnHtS#HWWLWL Y H PPeVak )orward 6urge Average forward current VR IFSM IO Power dissipation PD Thermal Resistance Junction to Ambient 5ș-$ Junction temperature Tj Storage temperature Tstg Limit 40 40 200 30 200 500 125 -55+~150ELECTRICAL CHARACTERISTICS
(Ta=25℃ unless otherwise specified) Parameter Reverse voltage leakage current Forward voltage Capacitance between terminals Symbol IR VF CT Test conditions VR=10V IF=1mA VR=1V, f=1MHz Min Typ 2.0 Unit V V mA mA mW ℃/W ℃ ℃ Max 1 0.37 Unit μA V pF 1 D,Oct,2015 FORWARD CURRENT I (mA) F Ta=100℃ Ta=25℃ REVERSE CURRENT I (uA) R Typical Characteristics Forward Characteristics 200 100 10 1 0.1 0.0 0.2 0.4 0.6 0.8 FORWARD VOLTAGE V (V) F 1.0 10 1 0.1 0.01 1E-3 0 Reverse Characteristics Ta=100℃ Ta=...