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RB715W
Schottky Barrier Diode
Features • Low current rectification
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Repetitive Peak Reverse Voltage Reverse Voltage Average Rectified Forward Current Peak Forward Surge Current (t = 8.3 ms ) Junction Temperature Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
Forward Voltage at IF = 1 mA Reverse Breakdown Voltage at IR = 10 µA Reverse Current at VR = 10 V Capacitance between Terminals at VR = 1 V, f = 1 MHz
3
12
Marking Code: 3D
Symbol VRM VR IF(AV) IFSM Tj Tstg
Value 40 40 30 200 125
- 55 to + 125
Unit V V mA mA OC OC
Symbol VF
Min. -
V(BR)R
40
IR -
Ct -
Typ. 2
Max. 0.37
1 -
Unit V V µA pF
SEMTECH ELECTRONICS LTD.
®
Dated:23/11/2015 Rev:02
RB715W
SEMTECH ELECTRONICS LTD.