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Features
* Glass sealed envelope * High speed * High reliability * High-speed switching
1SS133S
Silicon Epitaxial Planar Switching Diode
ABA
C D Cathode Mark
Maximum Ratings (TA=25℃ unless otherwise noted)
Peak Reverse Voltage
Parameter
DC Reverse Voltage
Average Rectified Forward Current
Peak Forward Current
Surge Forward Current at t < 1 s
Power Dissipation
Junction Temperature Storage Temperature Range
Electrical Characteristics (TA=25℃ unless otherwise noted)
Parameter Forward Voltage
at IF = 100 mA Reverse Current
at VR = 80 V Capacitance between Terminals
at VR = 0.5 V, f = 1 MHz Reverse Recovery Time
at IF = 10 mA, VR = 6 V, RL = 50 Ω
DO-34
INCHES
MM
DIM
MIN MAX MIN MAX
A 1.083 --- 27.50 ---
B
--- 0.114 ---
2.90
C
--- 0.018 ---
0.45
D
--- 0.075 ---
1.
1SS133S Datasheet
