1SS133S Datasheet | JGD

Features - Glass sealed envelope - High speed - High reliability - High-speed switching Silicon Epitaxial Planar Switching Diode C D Cathode Mark Maximum Ratings (TA=25℃ unless otherwise noted) Peak Reverse Voltage Parameter DC Reverse Voltage Average Rectified Forward Current Peak Forward Current Surge Forward Current at t < 1 s Power Dissipation Junction Temperature Storage Temperature Range Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 80 V Capacitance between Terminals at VR = 0.5 V, f = 1 MHz Reverse Recovery Time at IF = 10 mA, VR = 6 V, RL = 50 Ω DO-34 INCHES MIN MAX MIN...