JGD 1SS133S
Silicon Epitaxial Planar Switching Diode
| Part No. | 1SS133S |
|---|---|
| Datasheet | 1SS133S Download |
| Manufacturer |  JGD |
| Description | Silicon Epitaxial Planar Switching Diode |
| Buy | Stock & Price |
FEATURES
* Glass sealed envelope * High speed * High reliability * High-speed switching 1SS133S Silicon Epitaxial Planar Switching Diode ABA C D Cathode MarkMAXIMUM RATINGS
(TA=25℃ unless otherwise noted) Peak Reverse Voltage Parameter DC Reverse Voltage Average Rectified Forward Current Peak Forward Current Surge Forward Current at t < 1 s Power Dissipation Junction Temperature Storage Temperature RangeELECTRICAL CHARACTERISTICS
(TA=25℃ unless otherwise noted) Parameter Forward Voltage at IF = 100 mA Reverse Current at VR = 80 V Capacitance between Terminals at VR = 0.5 V, f = 1 MHz Reverse Recovery Time at IF = 10 mA, VR = 6 V, RL = 50 Ω DO-34 INCHES MM DIM MIN MAX MIN MAX A 1.083 --- 27.50 --- B --- 0.114 --- 2.90 C --- 0.018 --- 0.45 D --- 0.075 --- 1.90 Symbol VRM VR IF(AV) IFM IFSM Ptot Tj Tstg Value 90 80 130 400 600 300 175 - 65 to + 175 Unit V V mA mA mA mW ℃ ℃ Symbol VF IR CT trr Max. 1.2 0.5 2 4 Unit V µA pF ns Version: 6.1 www.
