• Part: JCS18N50WH
  • Manufacturer: JILIN SINO-MICROELECTRONICS
  • Size: 641.64 KB
Download JCS18N50WH Datasheet PDF
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JCS18N50WH Description

N 沟道增强型场效应晶体管 N- CHANNEL MOSFET R JCS18N50WH 主要参数 MAIN CHARACTERISTICS ID VDSS Rdson(@Vgs=10V) Qg 19 A 500 V 0.27Ω 50nC 用途 z 高频开关电源 z 电子镇流器 z UPS 电源 APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS 产品特性 z低栅极电荷 z低 Crss (典型值 25pF) z开关速度快 z产品全部经过雪崩测试 z高抗 dv/dt 能力 zRoHS.

JCS18N50WH Key Features

  • 漏极电流由最高结温限制
  • Drain current limited by maximum junction temperature
  • 100 nA
  • 100 nA
  • 0.22 0.27 Ω
  • 2300 2920 pF
  • 350 450 pF
  • 27 43 pF
  • 53 130 ns
  • 169 350 ns