JCS4N60BE
Key Features
- Low gate charge
- Low Crss (typical 2.5pF )
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Derate Power Dissipation 0.33 1.39 above 25℃ 最高结温及存储温度 Operating and Storage Temperature Range TJ，TSTG
- V 击穿电压温度特性 Breakdown Voltage Temperature Coefficient ΔBVDSS/Δ ID=250μA, referenced to
- 0.65 - TJ 25℃ V/℃ 零栅压下漏极漏电流 Zero Gate Voltage Drain Current 正向栅极体漏电流 VDS=600V,VGS=0V, IDSS TC=25℃
- 10 μA VDS=480V, TC=125℃
- 100 μA Gate-body leakage current, forward IGSSF VDS=0V, VGS =30V
