JCS630V Overview
R N 沟道增强型场效应晶体管 N-CHANNEL MOSFET JCS630V/R/S/B/C/F 主要参数 MAIN CHARACTERISTICS 封装 Package ID VDSS Rdson （@Vgs=10V） Qg 9.0 A 200 V 0.4 Ω 22 nC 用途 z 高频开关电源 z 电子镇流器 z UPS 电源 APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS.
JCS630V Key Features
- continuous
- 55～+150
- 漏极电流由最高结温限制 -Drain current limited by maximum junction temperature
- 0.34 0.4