• Part: JCS640
  • Manufacturer: JILIN SINO-MICROELECTRONICS
  • Size: 1.15 MB
Download JCS640 Datasheet PDF
JCS640 page 2
Page 2
JCS640 page 3
Page 3

JCS640 Description

R N 沟道增强型场效应晶体管 N-CHANNEL MOSFET JCS640 主要参数 MAIN CHARACTERISTICS 封装 Package ID VDSS Rdson (@Vgs=10V) Qg 用途 z 高频开关电源 z 电子镇流器 z UPS 电源 18.0 A 200 V 0.18Ω 47 nC APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS.

JCS640 Key Features

  • continuous
  • 55~+150
  • 漏极电流由最高结温限制 -Drain current limited by maximum junction temperature
  • 0.15 0.18