JCS640SH Description
N 沟道增强型场效应晶体管 N- CHANNEL MOSFET R JCS640H 主要参数 MAIN CHARACTERISTICS ID 18A VDSS 200 V Rdson-max （@Vgs=10V） 0.15Ω Qg-typ 27.5nC 封装 Package 用途 高频开关电源 电子镇流器 UPS 电源 APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS 产品特性.
JCS640SH Key Features
- Low gate charge
- 低 Crss (典型值 25pF) -Low Crss (typical 25pF )
- Fast switching
- 产品全部经过雪崩测试 -100% avalanche tested
- 高抗 dv/dt 能力
- Improved dv/dt capability
- RoHS 产品
- RoHS product
- Derate
- 55～+150