JCS8N60 Description
.DataSheet.co.kr R N 沟道增强型场效应晶体管 N-CHANNEL MOSFET JCS8N60 主要参数 MAIN CHARACTERISTICS 封装 Package ID VDSS Rdson （@Vgs=10V） Qg 用途 z 高频开关电源 z 电子镇流器 z UPS 电源 7.5 A 600 V 1.2 Ω 54 nC APPLICATIONS z High efficiency switch mode power supplies z Electronic lamp ballasts based on half bridge z UPS.
JCS8N60 Key Features
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- continuous
- pulse （note 1） 最高栅源电压 Gate-Source Voltage
- 55～+150
- 漏极电流由最高结温限制 -Drain current limited by maximum junction temperature
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