JCS9N95FA Description
N 沟道增强型场效应晶体管 R N-CHANNEL MOSFET JCS9N95A 主要参数 MAIN CHARACTERISTICS ID 9.0 A VDSS 950 V Rdson（Vgs=10V） -MAX 1.3Ω Qg-Typ 39.92 封装 Package 用途 高频开关电源. 电子镇流器 LED 电源 APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge LED power supplies 产品特性 平面 MOS 低栅极电荷 低 Crss（典型值 17pF） 开关速度快 产品全部经过雪崩测试 高抗 dv/dt 能力 RoHS.
JCS9N95FA Key Features
- Planar MOS -Low gate charge -Low Crss (typical 17pF ) -Fast switching -100% avalanche tested -Improved dv/dt capability
- JCS9N95WA
- Derate above
- 55～+150
- 漏极电流由最高结温限制 -Drain current limited by maximum junction temperature
- ID=250μA, referenced to 25℃
- VDS=760V, TC=125℃
- VDS=0V, =30V
- VDS=0V, =-30V
- 100 nA