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2SC3052 - TRANSISTOR

Key Features

  • Power dissipation PCM: 0.15 W (Tamb=25℃).

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Datasheet Details

Part number 2SC3052
Manufacturer Jiangsu Changjiang
File Size 53.62 KB
Description TRANSISTOR
Datasheet download datasheet 2SC3052 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23-3L Plastic-Encapsulate Transistors 2SC3052 FEATURES Power dissipation PCM: 0.15 W (Tamb=25℃) TRANSISTOR (NPN) SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 Collector current 0.2 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) VCE=6V, IC=0.