Datasheet Summary
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23-3L Plastic-Encapsulate Transistors
Features
Power dissipation PCM: 0.15 W (Tamb=25℃)
TRANSISTOR (NPN)
SOT-23-3L
1. BASE 2. EMITTER 3. COLLECTOR
1. 02
Collector current 0.2 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation...
