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SS8550 - PNP Transistor

Key Features

  • High Collector Current.
  • Complementary to SS8050 SOT.
  • 23.

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Datasheet Details

Part number SS8550
Manufacturer Jin Yu Semiconductor
File Size 966.06 KB
Description PNP Transistor
Datasheet download datasheet SS8550 Datasheet

Full PDF Text Transcription for SS8550 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for SS8550. For precise diagrams, tables, and layout, please refer to the original PDF.

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SS8 550 TRANSISTOR(PNP) FEATURES  High Collector Current  Complementary to SS8050 SOT–23 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -40 VCEO Collector-Emitter Voltage -25 VEBO Emitter-Base Voltage -5 IC Collector Current -1.5 PC Collector Power Dissipation 300 RΘJA Thermal Resistance From Junction To Ambient 417 Tj Junction Temperature Tstg Storage Temperature 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-base breakdown voltage V(BR)CBO IC=-100µA, IE=0 Collector-emitter breakdown voltage V(BR)CEO IC=-0.