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SEMICONDUCTOR
TECHNICAL DATA
FOR HIGH SPEED SWITCHING.
FEATURES Low reverse current, low capacitance. Small package : ESC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage
VR
4
V
Reverse Voltage
VR
4
V
Forward Current
IF
130
mA
Power Dissipation
PD*
150
mW
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55 150
* Mounted on a glass epoxy circuit board of 20 20 , Pad Dimension of 4 4
KDR582E
SCHOTTKY BARRIER TYPE DIODE
CATHODE MARK B A
C 1
2 D
1. ANODE 2. CATHODE
E
F
DIM A B C D E F
MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.
KDR582E Datasheet
