KDR582E
KDR582E is SCHOTTKY BARRIER TYPE DIODE manufactured by KEC.
SEMICONDUCTOR
TECHNICAL DATA
FOR HIGH SPEED SWITCHING.
Features
Low reverse current, low capacitance. Small package : ESC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Repetitive Peak Reverse Voltage
Reverse Voltage
Forward Current
130 mA
Power Dissipation
PD-
150 mW
Junction Temperature
Tj
Storage Temperature Range
Tstg
-55 150
- Mounted on a glass epoxy circuit board of 20 20 , Pad Dimension of 4 4
SCHOTTKY BARRIER TYPE DIODE
CATHODE MARK B A
C 1
2 D
1. ANODE 2. CATHODE
DIM A B C D E F
MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05
Marking
Type...
