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SEMICONDUCTOR
TECHNICAL DATA
KDR582F
SCHOTTKY BARRIER TYPE DIODE
FOR HIGH SPEED SWITCHING.
FEATURES hLow reverse current, low capacitance. hSuffix U : Qualified to AEC-Q101.
ex) KDR582F-RTK/HU
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING UNIT
Reverse Voltage Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature
VR
5
V
IO
10
mA
IFSM
130
mA
PD*
100
mW
Tj
150
Storage Temperature Range
Tstg
-55q150
* Mounted on a glass epoxy circuit board of 2020ɘ, Pad Dimension of 44ɘ
CATHODE MARK
C
D
B A
H
DIM MILLIMETERS
A
1.00+_ 0.05
B 0.80+0.10/-0.05
C
0.60+_ 0.05
D
0.30+_ 0.05
E
F
E
0.40 MAX
F
0.13+_ 0.05
G
0.10 MAX
G
H
0.25 MAX
1. ANODE 2.
KDR582F Datasheet
