KDR582F
KDR582F is SCHOTTKY BARRIER TYPE DIODE manufactured by KEC.
SEMICONDUCTOR
TECHNICAL DATA
SCHOTTKY BARRIER TYPE DIODE
FOR HIGH SPEED SWITCHING.
Features hLow reverse current, low capacitance. hSuffix U : Qualified to AEC-Q101. ex) KDR582F-RTK/HU
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL RATING UNIT
Reverse Voltage Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature
10 mA
IFSM
130 mA
PD-
100 mW
Tj
Storage Temperature Range
Tstg
-55q150
- Mounted on a glass epoxy circuit board of 20- 20ɘ, Pad Dimension of 4- 4ɘ
CATHODE MARK
DIM MILLIMETERS
1.00+_ 0.05
B 0.80+0.10/-0.05
0.60+_ 0.05
0.30+_ 0.05
0.40 MAX
0.13+_ 0.05
0.10...
