KEC KDR582F
SCHOTTKY BARRIER TYPE DIODE
FEATURES
hLow reverse current, low capacitance. hSuffix U : Qualified to AEC-Q101. ex) KDR582F-RTK/HU MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature VR 5 V IO 10 mA IFSM 130 mA PD* 100 mW Tj 150 Storage Temperature Range Tstg -55q150 * Mounted on a glass epoxy circuit board of 2020ɘ, Pad Dimension of 44ɘ CATHODE MARK C D B A H DIM MILLIMETERS A 1.00+_ 0.05 B 0.80+0.10/-0.05 C 0.60+_ 0.05 D 0.30+_ 0.05 E F E 0.40 MAX F 0.13+_ 0.05 G 0.10 MAX G H 0.25 MAX 1. ANODE 2. CATHODE TFSC Marking Type Name MELECTRICAL CHARACTERISTICS
(Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION Forward Voltage Reverse Current Total Capacitance IF=0.1mA VF IF=1mA IF=10mA VR=3V IR VR=3V, TA=60 CT VR=0V, f=1MHz Series Resistance rS IF=5mA, f=10kHz MIN. 0.2 0.25 0.35 0.4 - TYP. - MAX. 0.35 0.45 0.6 0.25 1.25 0.75 15 UNIT V ǺA pF ʃ 2018. 04. 10 Revision No : 1 1/2 Total Capacitance CT (pF) KDR582F CT...