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SEMICONDUCTOR
TECHNICAL DATA
FOR HIGH SPEED SWITCHING.
KDR582S
SCHOTTKY BARRIER TYPE DIODE
FEATURES
¡⁄ Low reverse current, low capacitance.
L E B L
2 A G H 1
3
MAXIMUM RATING (Ta=25¡
CHARACTERISTIC Repetitive Peak Reverse Voltage Reverse Voltage Forward Current Junction Temperature Storage Temperature Range
)
SYMBOL VR VR IF Tj Tstg RATING 4 4 130 150 ¡ ¡ -55¡› 150 UNIT
P P
V
C N
V mA
M K
DIM A B C D E G H J K L M N P
MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.40+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7
SOT-23
Marking
Lot No.
Type Name
MC
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ELECTRICAL CHARACTERISTICS (Ta=25¡
CHARACTERISTIC
)
TEST CONDITION IF=0.1mA MIN. 0.2 0.25 0.35 0.4 TYP. MAX. 0.35 0.45 0.6 0.25 1.25 0.
KDR582S Datasheet
