Datasheet Summary
SEMICONDUCTOR
TECHNICAL DATA
LOW CURRENT RECTIFICATION AND HIGH SPEED SWITCHING.
Features
Low Reverse Current : IR=0.1 A(Typ.) High Reliability. Small Package : ESC.
SCHOTTKY BARRIER TYPE DIODE
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Reverse Voltage Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature
VR 30
IO 200
IFSM
PD 150-
Tj 125
Storage Temperature Range
Tstg -40 125
- : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm.
UNIT V mA A mW
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
Reverse Current
TEST CONDITION IF=200mA VR=10V
MIN.
- TYP.
- MAX....