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SEMICONDUCTOR
TECHNICAL DATA
LOW CURRENT RECTIFICATION AND HIGH SPEED SWITCHING.
FEATURES Low Forward Voltage. High Reliability. Small Package .
hSuffix U : Qualified to AEC-Q101. ex) KDR730V-RTK/HU
KDR730V
SCHOTTKY BARRIER TYPE DIODE
CATHODE MARK
2
1
C
D
B
DIM MILLIMETERS
A
A
1.4 +_ 0.05
B
1.0 +_ 0.05
C
0.6 +_ 0.05
D
0.28 +_ 0.03
E
0.5 +_ 0.05
F
0.12 +_ 0.03
E
F
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC Reverse Voltage Average Forward Current Surge Current(10ms) Junction Temperature Storage Temperature Range
SYMBOL VR IO IRSM Tj Tstg
RATING 30 100 500 125
-55 125
UNIT V mA mA
1. ANODE 2. CATHODE
VSC
Marking
Type Name
SA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Forward Voltage
VF
Reverse Current
IR
TEST CONDITION IF=10mA VR=10V
MIN.
KDR730V Datasheet
