KEC KDS114E
SILICON EPITAXIAL PLANAR DIODE
| Part No. | KDS114E |
|---|---|
| Datasheet | KDS114E Download |
| Manufacturer |  KEC |
| Description | SILICON EPITAXIAL PLANAR DIODE |
| Buy | Stock & Price |
APPLICATIONS
. KDS114E SILICON EPITAXIAL PLANAR DIODEFEATURES
hSmall Package. hSmall Total Capacitance : CT=1.2pF(Max.). hLow Series Resistance : rS=0.5ʃ(Typ.). hSuffix U : Qualified to AEC-Q101. ex) KDS114E-RTK/HU MAXIMUM RATING (Ta=25) CHARACTERISTIC SYMBOL Reverse Voltage VR Forward Current IF Power Dissipation PD Junction Temperature Tj Storage Temperature Range Tstg RATING 35 100 100 150 -55q150 UNIT V mA mW CATHODE MARK B A C 1 2 D 1. ANODE 2. CATHODE E G G F DIM A B C D E F G MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 0.20+_ 0.10 ESC MARKING UDELECTRICAL CHARACTERISTICS
(Ta=25) CHARACTERISTIC SYMBOL TEST CONDITION Forward Voltage Reverse Current Reverse Voltage Total Capacitance VF IF=2mA IR VR=15V VR IR=1ǺA CT VR=6V, f=1MHz Series Resistance rs IF=2mA, f=100MHz MIN. 35 - TYP. 0.7 0.5 MAX. 0.85 0.1 1.2 0.9 UNIT V ǺA V pF ʃ 2019. 03. 15 Revision No : 4 1/2 SERIES RESISTANCE rS (Ω) KDS114E rS - IF 3 Ta=25 C f=100MHz 1 0.5 0.3 0.1 1 3...