Datasheet4U Logo Datasheet4U.com

KDS114V - SILICON EPITAXIAL PLANAR DIODE

Datasheet Summary

Features

  • Small Package. Small Total Capacitance : CT=1.2pF(Max. ). Low Series Resistance : rS=0.5 (Typ. ).

📥 Download Datasheet

Datasheet preview – KDS114V

Datasheet Details

Part number KDS114V
Manufacturer KEC
File Size 344.89 KB
Description SILICON EPITAXIAL PLANAR DIODE
Datasheet download datasheet KDS114V Datasheet
Additional preview pages of the KDS114V datasheet.

📁 Similar Datasheet

  • KDS181-RTR - Silicon Epitaxial Planar Diode (Kexin)
  • KDS - Intrusion Switches (ITT Industries)
  • KDS3512 - 80V N-Channel PowerTrench MOSFET (Guangdong Kexin Industrial)
  • KDS3601 - 100V Dual N-Channel PowerTrench MOSFET (Guangdong Kexin Industrial)
  • KDS3912 - 100V Dual N-Channel PowerTrench MOSFET (Guangdong Kexin Industrial)
  • KDS4470 - 40V N-Channel PowerTrench MOSFET (Kexin)
  • KDS4501H - Complementary PowerTrench Half-Bridge MOSFET (Kexin)
  • KDS4559 - 60V Complementary PowerTrench MOSFET (Kexin)
  • KDS4953 - Dual 30V P-Channel PowerTrench MOSFET (Kexin)
  • KDS5050 - KD-S5050 (JVC)
Other Datasheets by KEC
  • KDS114 - SILICON EPITAXIAL PLANAR DIODE
  • KDS114E - SILICON EPITAXIAL PLANAR DIODE
  • KDS112 - SILICON EPITAXIAL TYPE DIODE
  • KDS112E - SILICON EPITAXIAL TYPE DIODE
  • KDS113 - SILICON EPITAXIAL TYPE DIODE
  • KDS115 - SILICON EPITAXIAL PLANAR DIODE
  • KDS120 - SILICON EPITAXIAL TYPE DIODE
  • KDS120E - SCHOTTKY BARRIER TYPE DIODE

Full PDF Text Transcription

Click to expand full text
SEMICONDUCTOR TECHNICAL DATA KDS114V SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES Small Package. Small Total Capacitance : CT=1.2pF(Max.). Low Series Resistance : rS=0.5 (Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Forward Current Junction Temperature VR IF Tj Storage Temperature Range Tstg RATING 35 100 150 -55 150 UNIT V mA CATHODE MARK 21 B DIM MILLIMETERS A A 1.4Ź0.05 B 1.0Ź0.05 C 0.6Ź0.05 D 0.28Ź0.03 E 0.5Ź0.05 F 0.12Ź0.03 1. ANODE 2. CATHODE CE DF VSC Marking Type Name P1 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current Reverse Voltage Total Capacitance VF IR VR CT Series Resistance rs TEST CONDITION IF=2mA VR=15V IR=1 A VR=6V, f=1MHz IF=2mA, f=100MHz MIN.
Published: |