KDS114V - SILICON EPITAXIAL PLANAR DIODE

KEC

Key Features

Small Package. Small Total Capacitance : CT=1.2pF(Max. ). Low Series Resistance : rS=0.5 (Typ. ).

KDS114V silicon epitaxial planar diode by KEC - Datasheet Preview

Datasheet Details

Part number	KDS114V
Manufacturer	KEC
File Size	344.89 KB
Description	SILICON EPITAXIAL PLANAR DIODE
Datasheet	KDS114V Datasheet

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Other Datasheets by KEC

Part Number	Description
KDS114	SILICON EPITAXIAL PLANAR DIODE
KDS114E	SILICON EPITAXIAL PLANAR DIODE
KDS112	SILICON EPITAXIAL TYPE DIODE
KDS112E	SILICON EPITAXIAL TYPE DIODE
KDS113	SILICON EPITAXIAL TYPE DIODE

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SEMICONDUCTOR TECHNICAL DATA KDS114V SILICON EPITAXIAL PLANAR DIODE VHF TUNER BAND SWITCH APPLICATIONS. FEATURES Small Package. Small Total Capacitance : CT=1.2pF(Max.). Low Series Resistance : rS=0.5 (Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Forward Current Junction Temperature VR IF Tj Storage Temperature Range Tstg RATING 35 100 150 -55 150 UNIT V mA CATHODE MARK 21 B DIM MILLIMETERS A A 1.4Ź0.05 B 1.0Ź0.05 C 0.6Ź0.05 D 0.28Ź0.03 E 0.5Ź0.05 F 0.12Ź0.03 1. ANODE 2. CATHODE CE DF VSC Marking Type Name P1 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current Reverse Voltage Total Capacitance VF IR VR CT Series Resistance rs TEST CONDITION IF=2mA VR=15V IR=1 A VR=6V, f=1MHz IF=2mA, f=100MHz MIN.