• Part: KDS112E
  • Description: SILICON EPITAXIAL TYPE DIODE
  • Manufacturer: KEC
  • Size: 341.91 KB
Download KDS112E Datasheet PDF
KDS112E page 2
Page 2

Datasheet Summary

SEMICONDUCTOR TECHNICAL DATA VHF TUNER BAND SWITCH APPLICATIONS. Features Small Package. Small Total Capacitance : CT=1.2pF(Max.). Low Series Resistance : rS=0.6 (Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Forward Current Junction Temperature VR IF Tj Storage Temperature Range Tstg RATING 30 50 125 -55 125 UNIT V mA SILICON EPITAXIAL TYPE DIODE 2 13 FF 1. ANODE 1 2. ANODE 2 3. CATHODE D DIM MILLIMETERS A 1.60+_ 0.20 B 0.85+_ 0.10 C 0.70+_ 0.10 D 0.27+_ 0.10 E 1.60+_ 0.10 F 0.39+_ 0.10 G 1.00+_ 0.10 J 0.13+_ 0.05 Marking ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Forward...