KEC KDS114
SILICON EPITAXIAL PLANAR DIODE
| Part No. | KDS114 |
|---|---|
| Datasheet | KDS114 Download |
| Manufacturer |  KEC |
| Description | SILICON EPITAXIAL PLANAR DIODE |
| Buy | Stock & Price |
APPLICATIONS
. B G 1 CATHODE MARK E A K FFEATURES
Small Package. Small Total Capacitance : CT=1.2pF(Max.). Low Series Resistance : rS=0.5 (Typ.). Suffix U : Qualified to AEC-Q101. ex) KDS114-RTK/HU MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range SYMBOL VR IF Tj Tstg RATING 35 100 150 -55 150 UNIT V mA 2 D 1. ANODE 2. CATHODE H C DIM A B C D E F G H K Unit : mm MILLIMETERS 2.50 ± 0.20 1.25 ± 0.05 0.90 ± 0.05 0.30 ± 0.06 1.70 ± 0.05 0.27 ± 0.10 0.126 ± 0.03 0 ~ 0.1 0.40 ± 0.10 USC Marking Type Name UD Lot No.ELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Forward Voltage VF IF=2mA Reverse Current IR VR=15V Reverse Voltage Total Capacitance VR IR=1 A CT VR=6V, f=1MHz Series Resistance rs IF=2mA, f=100MHz MIN. 35 - TYP. 0.7 0.5 MAX. 0.85 0.1 1.2 0.9 UNIT V A V pF 2026. 02. 04 Revision No : 6 1/2 SERIES RESISTANCE rS (Ω) KDS114 r S - IF 3 Ta=25 C f=100MHz 1 0.5 0.3 0.1 1 3 10 30 100 FORWARD CURRE...