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KDS112 - SILICON EPITAXIAL TYPE DIODE

Key Features

  • Small Package. Small Total Capacitance : CT=1.2pF(Max. ). Low Series Resistance : rS=0.6 (Typ. ).

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Datasheet Details

Part number KDS112
Manufacturer KEC
File Size 27.39 KB
Description SILICON EPITAXIAL TYPE DIODE
Datasheet download datasheet KDS112 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA VHF TUNER BAND SWITCH APPLICATIONS. FEATURES Small Package. Small Total Capacitance : CT=1.2pF(Max.). Low Series Resistance : rS=0.6 (Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Forward Current Junction Temperature VR IF Tj Storage Temperature Range Tstg RATING 30 50 125 -55 125 UNIT V mA C L A J G KDS112 SILICON EPITAXIAL TYPE DIODE E MB M 2 13 NK N 1. ANODE 1 2. ANODE 2 3. CATHODE DIM MILLIMETERS DA B 2.00+_ 0.20 1.25 +_ 0.15 C 0.90 +_ 0.10 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 K 0.00-0.10 L 0.70 H M 0.42+_ 0.10 N 0.10 MIN 3 21 USM Marking Type Name BF Lot No.