KDS113 Datasheet PDF

APPLICATIONS

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FEATURES

Small Package. Small Total Capacitance : CT=1.2pF(Max.). Low Series Resistance : rS=0.6 (Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range SYMBOL VR IF Tj Tstg RATING 30 50 125 -55 125 UNIT V mA C L A J G KDS113 SILICON EPITAXIAL TYPE DIODE E MB M 2 13 NK N 1. CATHODE 1 2. CATHODE 2 3. ANODE DIM MILLIMETERS DA B 2.00+_ 0.20 1.25 +_ 0.15 C 0.90 +_ 0.10 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 K 0.00-0.10 L 0.70 H M 0.42+_ 0.10 N 0.10 MIN 3 21 USM Marking T3

ELECTRICAL CHARACTERISTICS

(Ta=25 ) CHARACTERISTIC SYMBOL Forward Voltage Reverse Current Reverse Voltage Total Capacitance Series Resistance VF IR VR CT rs TEST CONDITION IF=2mA VR=15V IR=1 A VR=6V, f=1MHz IF=2mA, f=100MHz MIN. 30 - TYP. 0.8 0.6 MAX. 0.85 0.1 1.2 0.9 UNIT V A V pF 2003. 2. 24 Revision No : 2 1/2 SERIES RESISTANCE rs (Ω) KDS113 rs - IF 3 Ta=25 C f=100MHz 1 0.5 0.3 1 35 10 FORWARD CURRENT IF (mA) 20...