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KDS113 - SILICON EPITAXIAL TYPE DIODE

Key Features

  • Small Package. Small Total Capacitance : CT=1.2pF(Max. ). Low Series Resistance : rS=0.6 (Typ. ).

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Datasheet Details

Part number KDS113
Manufacturer KEC
File Size 381.43 KB
Description SILICON EPITAXIAL TYPE DIODE
Datasheet download datasheet KDS113 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA VHF TUNER BAND SWITCH APPLICATIONS. FEATURES Small Package. Small Total Capacitance : CT=1.2pF(Max.). Low Series Resistance : rS=0.6 (Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range SYMBOL VR IF Tj Tstg RATING 30 50 125 -55 125 UNIT V mA C L A J G KDS113 SILICON EPITAXIAL TYPE DIODE E MB M 2 13 NK N 1. CATHODE 1 2. CATHODE 2 3. ANODE DIM MILLIMETERS DA B 2.00+_ 0.20 1.25 +_ 0.15 C 0.90 +_ 0.10 D 0.3+0.10/-0.05 E 2.10 +_ 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30 K 0.00-0.10 L 0.70 H M 0.42+_ 0.10 N 0.