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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES
Small package : TFSV. Low forward voltage. Fast reverse recovery time. Small total capacitance.
C
KDS166F
SILICON EPITAXIAL PLANAR DIODE
B B1
MAXIMUM RATING (Ta=25 CHARACTERISTIC
) SYMBOL VRM VR IFM IO IFSM PD * Tj Tstg 1.5 RATING 85 80 300 100 2 100 150 -55 150 UNIT V
H
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Power Dissipation Junction Temperature Storage Temperature Range * : Unit rating. Total rating=unit rating
DIM A A1 B B1 C D H T
MILLIMETERS _ 0.05 1.0 + _ 0.05 0.7 + _ 0.05 1.0 + _ 0.05 0.8 + 0.35 _ 0.05 0.15 + 0.38+0.02/-0.04 _ 0.05 0.1 +
A1 C
A
D
V mA mA A mW
T
1. ANODE 1 2. N.C 3. ANODE 2 4. CATHODE 2 5.
KDS166F Datasheet
