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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Small Package : USC. Low Forward Voltage. Fast Reverse Recovery Time. Small Total capacitance. Suffix U : Qualified to AEC-Q101. ex) KDS160-RTK/HU
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS) Power Dissipation
VRM VR IFM IO IFSM PD *
85 80 300 100 2 200
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
* : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm.
UNIT V V mA mA A mW
KDS160
SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK E A K
F L
B 1
2 D
MM 1. ANODE 2. CATHODE
G
H
J C I
DIM MILLIMETERS A 2.50+_ 0.2 B 1.25+_ 0.05 C 0.
KDS160 Datasheet
