KDS160E
KDS160E is Silicon Diode manufactured by KEC.
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
SILICON EPITAXIAL PLANAR DIODE
Features
Small Package : ESC. Low Forward Voltage. Fast Reverse Recovery Time. Small Total capacitance. Suffix U : Qualified to AEC-Q101. ex) KDS160E-RTK/HU
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10mS)
VRM VR IFM IO IFSM
85 80 300 100 2
Power Dissipation
PD- 150
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
- : Mounted on a glass epoxy circuit board of 20 20mm, pad dimension of 4 4mm.
UNIT V V mA mA A mW
CATHODE MARK...
