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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Low Forward Voltage. Fast Reverse Recovery Time. Small Total Capacitance.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
VRM
85
Reverse Voltage
VR 80
Maximum (Peak) Forward Current
IFM *
300
Average Forward Current
IO * 100
Surge Current (10ms)
IFSM *
2
Power Dissipation
PD **
900
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
* : Unit Rating. (Total Rating=Unit Rating 1.5) ** : Total rating, Package mounted on a ceramic board (600 0.8 )
UNIT V V mA mA A mW
CA F
K D
KDS165T
SILICON EPITAXIAL PLANAR DIODE
E B 14
23
DIM MILLIMETERS A 2.9+_ 0.2
B 1.6+0.2/-0.1 C 0.70+_ 0.05 D 0.4+_ 0.1
E 2.8+0.2/-0.3 F 1.9+_ 0.2 G 0.16+_ 0.05
H 0.
KDS165T Datasheet
