• Part: KDS165T
  • Description: SILICON EPITAXIAL PLANAR DIODE
  • Manufacturer: KEC
  • Size: 363.29 KB
Download KDS165T Datasheet PDF
KEC
KDS165T
KDS165T is SILICON EPITAXIAL PLANAR DIODE manufactured by KEC.
SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. Features Low Forward Voltage. Fast Reverse Recovery Time. Small Total Capacitance. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage VR 80 Maximum (Peak) Forward Current - 300 Average Forward Current - 100 Surge Current (10ms) IFSM - 2 Power Dissipation - - Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 - : Unit Rating. (Total Rating=Unit Rating 1.5) - - : Total rating, Package mounted on a ceramic board (600 0.8 ) UNIT V V mA mA A mW CA F SILICON EPITAXIAL PLANAR DIODE E B...